Nonequilibrium spin distribution in a single-electron transistor
نویسندگان
چکیده
Single-electron transistor with ferromagnetic outer electrodes and a nonmagnetic island is studied theoretically. Nonequilibrium electron-spin distribution in the island is caused by tunneling current. The dependences of the magnetoresistance ratio d on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins. Inside a dip d can become negative. @S0163-1829~98!02046-3#
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